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采用GaAs离子注入工艺，研制了GaAsX／Ku波段单片功率放大器。放大器末级栅宽76mm，频率9—13GHz，增益大于9．5dB，输出功率3W（f＝11GHz时达4W），效率≥22％（11GHz时达30％）。
GaAsX / Ku band monolithic power amplifier was developed by using GaAs ion implantation technology. Amplifier final gate width 76mm, frequency 9-13GHz, gain greater than 9.5dB, the output power of 3W (f = 11GHz up to 4W), efficiency ≥ 22% (up to 30% at 11GHz).