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以高纯石墨作靶、CHF3 Ar作源气体采用反应磁控溅射法制备了介电常数在 1 77左右的氟化类金刚石 (F DLC)薄膜 .拉曼光谱表明 ,源气体中CHF3相对流量、射频功率和工作气压的增加都会引起薄膜的D峰与G峰强度之比ID IG 减小 ,薄膜中链式 (烯烃 )结构比例的上升 .红外吸收光谱分析表明薄膜的主体骨架仍为芳香环式结构 .薄膜的性质如光学带隙和介电常数等不仅与氟含量有关 ,还与碳氟原子间的耦合形式和碳氟键的分布密切相关 .
High-purity graphite as a target, CHF3 Ar as the source gas by reactive magnetron sputtering prepared a dielectric constant of about 1 in 77 fluorine diamond (F DLC) film Raman spectroscopy shows that the source gas CHF3 relative flow , The increase of radio frequency power and working pressure will cause the ratio of the D peak to the peak intensity of the film, ID IG, to decrease, and the proportion of chain (alkene) structure in the film increases.The IR spectra show that the main skeleton of the film is still aromatic Structure.The properties of thin films, such as optical bandgap and dielectric constant, are not only related to the content of fluorine but also closely related to the coupling between carbon and fluorine atoms and the distribution of fluorocarbon bonds.