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本文叙述了18GHz低噪声GaAs MESFET的设计和制作。讨论了影响器件性能和成品率的材料、工艺因素。在18GHz下器件的最小噪声系数为1.7dB,相关增益为7.0dB。
This article describes the 18GHz low noise GaAs MESFET design and fabrication. Discusses the material and process factors that affect device performance and yield. The minimum noise figure of the device at 1.7GHz is 1.7dB and the associated gain is 7.0dB.