GaAs衬底上分子束外延α-Sn薄膜及其量子阱结构考虑

• 作 者: 易新建 郝建华 张新宇 G.K.Wong
• 机 构: 华中理工大学光电子工程系!武汉430074,华中理工大学光电子工程系!武汉430074,华中理工大学光电子工程系!武汉430074,NorthwesternUniversity,MaterialsRe
• 出 处: 中国科学(A辑)
• 发表日期: 1998年02期
• 关键词: GaAs衬底 分子束外延 量子阱结构 Sn 薄膜技术 量子尺寸效应 异质结外延 高能电子 亚稳态 透射电子显微镜

利用分子束外延 (MBE)在GaAs( 0 0 1)单晶衬底上进行了α Sn薄膜的生长 ,利用反射高能电子显微镜 (RHEED) ,原位监控α Sn的生长过程和利用透射电子显微镜 (TEM )分析了界面结构 .测试结果表明 ,与以往报道相比亚稳态的α Sn膜具有高得多的温度稳定性 (由 70℃提高到 10 0℃ )和厚度稳定性 (由 5 0 0nm提高到 70 0nm) ,并观察到在其他电性能方面的改进 .此外 ,还提出了一种新型量子阱结构 .

Α Sn thin films were grown on GaAs (0 0 1) single crystal substrate by molecular beam epitaxy (MBE). The growth process of α Sn was monitored by in situ reflection electron microscopy (RHEED) and the growth of α Sn was observed by transmission electron microscopy TEM) analysis of the interface structure.The test results show that, compared with previous reports, metastable α Sn film has much higher temperature stability (from 70 ℃ to 10 ℃) and thickness stability (from 500nm To 70 0 nm) and improvements in other electrical properties were observed.In addition, a new type of quantum well structure was also proposed.