论文部分内容阅读
面向芯片级原子光学器件的研制需要,研究了垂直腔面发射半导体激光器的高频调制特性及Bogatov效应引起的一级侧边带转移效率的不对称现象。设计制作了垂直腔面发射半导体激光器的控制电路与基于微带匹配技术的高精度阻抗匹配电路。通过实验研究了不同射频输入功率下激光器的调制效率。结果显示:在3.4 GHz、3.162 mW射频功率输入下,实现了最大为60%的边带转移效率;激光器一级左右边带调制幅度具有不对称性,并且该不对称性随射频输入功率的增加而增强。
For the development of chip-level atomic optics, the high-frequency modulation characteristics of vertical cavity surface-emitting semiconductor lasers and the asymmetry of the primary sideband transfer efficiency caused by the Bogatov effect are studied. The control circuit of vertical cavity surface emitting semiconductor laser and the high precision impedance matching circuit based on microstrip matching technology are designed and manufactured. The experimental results show that the modulation efficiency of the laser at different RF input powers is experimentally studied. The results show that the efficiency of sideband transfer is up to 60% under the RF power input of 3.4 GHz and 3.162 mW. The modulation amplitude of the left and right sidebands of the laser has asymmetry, and the asymmetry increases with the increase of RF input power And enhanced.