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我们已制成用 CdSe-Ta_2O_5薄膜晶体管寻址的128×96象素液晶显示器,象素大小为300×300μm~2。在沟道长30μm,宽20μm 时,截止电流<1 pA,导通电流≥10~8倍(V_G=0V/20V,V_(DS)=10V)。V_G=-5 V 时,I_(off)甚至降到0.1pA 以下。I_(on)/I_(off)≥10~8的高比值主要是通过在同一真空中沉积半导体并作第一次热处理而实现的。
We have made a 128 × 96 pixel LCD with a CdSe-Ta_2O_5 thin film transistor addressed with a pixel size of 300 × 300μm ~ 2. When the channel length is 30μm and the width is 20μm, the turn-off current is less than 1 pA and the turn-on current is more than or equal to 10 ~ 8 times (V_G = 0V / 20V, V_DS = 10V). When V_G = -5 V, I_off even drops below 0.1 pA. The high ratio of I / (on) / Ioff (? 10? 8) is mainly achieved by depositing the semiconductor in the same vacuum and performing the first heat treatment.