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对用射频磁控溅射法形成的单晶及多晶Al2 O3与Ni界面的化学状态进行研究 .离子减薄结合X射线光电子能谱方法原位对界面电子态研究表明 :未经过热处理的界面没有化学状态的变化 .Ni/Al2 O3(0 0 0 1 )界面经退火处理后界面处Ni有多种结合态存在 .N2 气保护下在 4 0 0℃和 80 0℃对Ni/Al2 O3(多晶 )样品保温 30min ,Ni,Al化学状态变化虽不明显 ,但高温 (80 0℃ )处理导致Ni向Al2 O3 基片内扩散 .
The chemical states of single-crystal and polycrystalline Al 2 O 3 and Ni interfaces formed by radio-frequency magnetron sputtering were studied.Ion-thinning combined with X-ray photoelectron spectroscopy in-situ study of interfacial electron states showed that the interface of the non-heat treated interface There is no change of chemical state.Ni / Al 2 O 3 (0 0 0 1) interface after annealing at the interface Ni have a variety of binding state exists.N2 gas at 400 ℃ and 80 0 ℃ Ni / Al 2 O 3 ( Polycrystalline) samples incubated 30min, Ni, Al chemical state change is not obvious, but the high temperature (80 0 ℃) treatment led to the diffusion of Ni to Al2O3 substrate.