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简要分析了ＩＧＢＴ器件的工作机理，对制作的２０Ａ／１０５０ＶＩＧＢＴ芯片进行了中子辐照实验，并对比了辐照前后器件的关断特性，发现辐照可提高器件的开关速度，但也导致了器件有关特性的退化。
A brief analysis of the working mechanism of the IGBT device was made. The irradiated experiment of neutron irradiation on the fabricated 20A / 1050VIGBT chip was carried out and the turn-off characteristics of the device before and after irradiation were compared. It is found that the irradiation can increase the switching speed of the device, Device-related degradation.