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在真空下用CZ法生长硅单晶时,经热力学分折和实验研究证明,硅单晶中碳的主要来源除石墨托与石英坩埚间的反应生成CO外,气氛中氧化组元(O_2,SiO等)亦与石墨器件反应生成CO。碳以CO形式进入融硅,使硅单晶中碳含量增加。本研究采用了对石墨器件表面涂SiC、Mo、ZrO_2和热解石墨等方法,并用石英保温筒代替石墨保温筒。在真空度为1～3×10~(-2)托下,投料300g,用CZ法生长硅单晶,其晶体尾部的碳量平均值,比原工艺晶体中碳的平均含量降低了45％。
When the silicon single crystals were grown by CZ under vacuum, the thermodynamic analysis and experimental study showed that the main source of carbon in the silicon single crystal was CO addition in the reaction between graphite support and quartz crucible, SiO, etc.) also react with graphite devices to generate CO. Carbon enters the molten silicon in the form of CO, increasing the carbon content in the silicon single crystal. In this study, SiC, Mo, ZrO_2 and pyrolytic graphite were coated on the surface of graphite devices, and quartz thermal insulation tube was used instead of graphite thermal insulation tube. Under the vacuum degree of 1 ~ 3 × 10 ~ (-2) torr, 300g feed, the growth of silicon single crystal by CZ method, the average crystal carbon tail, compared with the original process of the average crystal carbon content decreased by 45% .