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本文从反应动力学的讨论中得出提高炉产量的三个途径,我们重点研究了增大坩埚的横截面积,以提高晶体的产量。在晶体生长的热力学分析中,对生长大面积 GaP 单晶的机理进行了初步的探讨,并得出结论:较大直径的平底坩埚对生长大面积 GaP 单晶是一个有利的因素,但必须具备其相应的过饱和度。在我们的实验中,φ35毫米的晶体,获得最大单晶粒截面的绝对面积为9厘米~2,φ45毫米的晶体,获得最大单晶粒截面的绝对面积为13厘米~2。
In this paper, three ways to increase furnace output are derived from the discussion of reaction kinetics. We focus on increasing the cross-sectional area of the crucible to increase the yield of the crystal. In the thermodynamic analysis of crystal growth, the mechanism of growing a large area GaP single crystal is discussed preliminarily, and the conclusion is that the large diameter flat bottom crucible is a favorable factor for growing a large area GaP single crystal, Its corresponding supersaturation. In our experiment, the crystal of φ35mm obtained the crystal with the largest single crystal grain cross section with the absolute area of 9cm ~ 2 and φ45mm, and the absolute area of the largest single crystal grain cross section was 13cm ~ 2.