,Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)

• 机 构: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
• 出 处: 中国物理快报(英文版)
• 发表日期: 2010年3期
• 关键词: Si(111) 薄膜生长 氮化镓 氮化铝 中间层 透射电子显微镜 堆积 GaN薄膜

We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.