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在晶体管可靠性研究方面,国内、外都以大量的人力物力,从各个不同角度出发,使用较为先进的分析仪器和手段进行广泛深入地研究工作,首先是通过失效模式的分析,找出失效机理,再通过试验,最后提出改进的办法.所以半导体器件的可靠性达到较高的水平,国外半导体分立器件的失效率已达到1×10~(-6),国内的分立器件失效率也已经达到1×10~(-5)的水平.但是有些器件跟国外同类产品相比,在可靠性方面还存在一定的差距,远远满足不了用户的使用要求.
In transistor reliability research, both at home and abroad, with a lot of manpower and resources, from different perspectives, the use of more advanced analytical instruments and means for extensive and in-depth research, the first is through the failure mode analysis to find out the failure mechanism , And then through the test, and finally proposed improvements, so the reliability of semiconductor devices to a higher level, the failure rate of foreign semiconductor discrete devices has reached 1 × 10 -6, the domestic discrete device failure rate has also been reached 1 × 10 ~ (-5) level.But some devices compared with similar foreign products, there is still a certain degree of reliability gap, far from meeting the user’s requirements.