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开发了一种成象技术,用于形成集成电路受到离子照射发生单粒子翻转区域的图象,已经达到了微米量级分辨率。从得到的图象中,能直接确定集成电路中易发生翻转的部位及大小。借助一种扫描式核微探针,还可以有选择性地照射集成电路中的最小功能单元(如晶体管的漏极、栅极),同时测量高能离子冲击对电路性能的影响。另外,关于集成电路抗辐射能力的信息(如总剂量响应和导致翻转的 LET 阈值),以前是在电路级测得的,现在也可以在单个晶体管级测得了。本文将以详尽的篇幅介绍这种准确的新诊断枝术,用它可研究集成电路中的单粒子翻转过程。
An imaging technique has been developed for forming an image of a single-electron-flip-flop region of an integrated circuit exposed to ion radiation that has reached micron order resolution. From the obtained image, it is possible to directly determine the position and the size of the flip-flop in the integrated circuit. With a scanning nuclear microprobe, the smallest functional units in the integrated circuit (such as the drain and gate of the transistor) can be selectively illuminated and the impact of high energy ion impact on the circuit performance can be measured. In addition, information on the radiation resistance of integrated circuits (such as the total dose response and the LET threshold causing rollover) was previously measured at the circuit level and is now also measurable at the single transistor level. This article will provide an exhaustive account of this new and accurate diagnostic technique that can be used to study single-particle flipping in integrated circuits.