论文部分内容阅读
本文根据电子衍射强度与物相结构因子绝对值一次方成正比的近似式计算了θ-Fe_3C与ε-Fe_2C的单晶电子衍射强度。并将计算结果和(1)实拍的θ-Fe_3C电子衍射强度、(2)日本学者桶谷繁雄所计算与观测的θ-Fe_3C电子衍射强度、(3)ASTM卡片所载θ-Fe_3C与ε-Fe_2C多晶X衍射强度进行了比较,指出:(1)当两个物相的某一对倒易平面约化胞十分接近,难从倒易点的几何配置来决定其归宿时,有可能利用衍射强度的不同来区别它们;(2)桶谷对θ-Fe_3C电子衍射强度的计算与观测有个别地方失误;(3)ASTM卡片所载多晶X衍射强度同单晶电子衍射强度在强弱顺序与强弱等级上都可能不同。因此,上述对电子衍射强度的简化计算是有效与有益的。
In this paper, the single crystal electron diffraction intensities of θ-Fe 3 C and ε-Fe 2 C are calculated based on the approximate formula of the electron diffraction intensity proportional to the absolute value of the phase structure factor. (2) the calculated and observed θ-Fe_3C electron diffraction intensity by Japanese scholar Katsutaka Taniguchi, (3) the relationship between θ-Fe_3C and ε-Fe_3C in ASTM card, The results show that: (1) When the reciprocal plane deconvolution of a pair of two phases is very close, it is difficult to use the geometric configuration of the reciprocal point to determine its return. Diffraction intensity difference to distinguish them; (2) barrel valley on the θ-Fe_3C electron diffraction intensity calculation and observation of individual local errors; (3) ASTM card containing polycrystalline X-ray diffraction intensity with single crystal electron diffraction intensity in the order of strength And strength levels may be different. Therefore, the above simplified calculation of electron diffraction intensity is effective and beneficial.