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本文以Early效应为主导线索,分析推导了共射(CE)差分级及共射-共基(CE-CB)、共射-共栅(CE-CG)串接差分级的输入失调电压Vos与共模抑制比(CMRR)的理论计算公式。证明Early效应对输入失调特性与共模抑制特性起着重要作用。文中还分析了后随级的非理想特性对输入失调电压温漂的影响,指出了实现低漂移功能块的匹配方法。据此分析而制作的低漂移运算功能块,其开环增益与共模抑制比均不低于120dB,失调电压温漂不大于±0.5μV/℃。 这种可用分立元件组装或可与单片集成前置级混合组装的功能块,可以作为自动控制与自动检测系统的高性能通用运算元件。
In this paper, the Early effect is taken as the leading clue, and the input offset voltage Vos and total common-common-base (CE-CB) and cascode-cascode differential The theoretical calculation formula of mode rejection ratio (CMRR). It is demonstrated that the Early effect plays an important role in the input offset characteristic and the common mode rejection characteristic. In the paper, the influence of the non-ideal characteristic of the following stage on the temperature drift of the input offset voltage is also analyzed, and the matching method for realizing the low-drift function block is pointed out. According to the analysis and fabrication of low-drift computing block, the open-loop gain and common mode rejection ratio of not less than 120dB, offset voltage drift is not greater than ± 0.5μV / ℃. This function block, available as discrete components or as a hybrid with monolithically integrated front-end stages, can be used as a high-performance general purpose computing component for automated control and automated inspection systems.