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现用于集成电路（ＩＣ）成品率预报及故障分析的缺陷模型均是用圆或正方形来代替真实缺陷的复杂轮廓进行近似建模的，从而在模型中引入了很大的误差．本文利用分段线性插值的思想直接对真实缺陷的方向尺寸进行逼近，从而提出了一种新的缺陷轮廓表征模型．实验结果表明：与传统的最大圆模型、最小圆模型及椭圆模型相比，新模型的建模精度有了较大的提高．
The defect models that are used for IC yield prediction and fault analysis are all approximated by using the circle or square instead of the complex outline of the real defects to introduce a large error in the model. In this paper, the idea of piecewise linear interpolation is used to directly approach the directional dimension of real defects, so a new model of defect contour representation is proposed. Experimental results show that compared with the traditional maximum circular model, the minimum circular model and the elliptic model, the modeling accuracy of the new model has been greatly improved.