120-nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48)As InP-based HEMT

• 作 者: 黄杰 郭天义 张海英 徐静波 付晓君 杨浩 牛洁斌
• 机 构: Institute of Microelectronics,Chinese Academy of Sciences,School of Physical Science and Technology,
• 出 处: 半导体学报
• 发表日期: 2010年07期
• 关键词: drain length Al As/In Ga fabrication stack saturation cutoff shaped

120 nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48) As InP-based high electron mobility transitions(HEMTs) are fabricated by a new T-shaped gate electron beam lithograph(EBL) technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack.These devices also demonstrate excellent DC and RF characteristics:the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm,446 mA/mm, -1.0 V,141 GHz and 120 GHz,respectively.The material structure and all the device fabrication technology in this work were developed by our group.

120 nm gate-length In 0.7 Ga 0.3 As / In 0.52 Al 0.48 As InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology , which is achieved by the use of a PMMA / PMGI / ZEP520 / PMGI four-layer photoresistor stack. The devices also demonstrate excellent DC and RF characteristics: the transconductance, maximum saturation drain-to- frequency and maximum power-gain cutoff frequency of InGaAs / InAlAs HEMTs is 520 mS / mm, 446 mA / mm, -1.0 V, 141 GHz and 120 GHz respectively. The material structure and all the device fabrication technology in this work were developed by our group.