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日本三菱电机公司已制成1040×1040(约100万)像素的红外摄像器件(波长为3～5μm)。在光电转换部分采用 PtSi 势垒二极管,并用 CCD 传输电荷。目前,日本电气等公司已制成40万像素的器件,红外摄像器件(获取被摄体发出的红外线传感器),用于监视摄像机和温度计。可检出器件的温差为0.1K(被摄体的环境温度为300K,器件冷却到80K)。每1cm~2的暗电流为7.9nA(环境温度为77K),耗散功率为300mW。CCD 传输时钟频
Japan’s Mitsubishi Electric Corporation has made 1040 × 1040 (about 100 million) pixel infrared camera (wavelength of 3 ~ 5μm). In the photoelectric conversion part of the use of PtSi barrier diode, and CCD charge transfer. Currently, Nippon Electric and other companies have made 40-megapixel devices, infrared camera devices (to obtain the infrared sensor issued by the subject), for surveillance cameras and thermometers. Detectable device temperature difference of 0.1K (ambient temperature of 300K, the device cooled to 80K). Dark current per 1cm ~ 2 7.9nA (ambient temperature of 77K), dissipated power of 300mW. CCD transmission clock frequency