Effect of Heating on Hydrogen Retention in C-SiC Coatings

• 作 者: 杜纪富 黄宁康
• 机 构: Key Lab of Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Sci
• 出 处: Journal of Wuhan University of Technology(Materials Science
• 发表日期: 2008年05期
• 关键词: retention heating stainless magnetron sputtering implanted utilized removing arg

C-SiC coatings were prepared on stainless steel with magnetron sputtering deposi-tion followed by Argon ion bombardment. These samples were implanted by 5 keV hydrogen ion beam. SEM, SIMS and IR transmission were utilized to study the mechanism and the stability of hydrogen retention of C-SiC coatings. Comparison was made between the samples with and without removing Argon by heating then followed by H+ ion implantation. The results show that removal of argon by heating can improve the hydrogen retention of the C-SiC coatings. The thermal stability of hydrogen barrier for the C-SiC coatings was investigated, it is found that the property of hydrogen retention for the C-SiC coatings is still good after heating at 573 K, but it becomes worse after heating at 873 K, and it loses after heating at 1 173 K.

C-SiC coatings were prepared on stainless steel with magnetron sputtering deposi- tion followed by Argon ion bombardment. These samples were implanted by 5 keV hydrogen ion beam. SEM, SIMS and IR transmission were utilized to study the mechanism and the stability of hydrogen retention Comparison was made between the samples with and without removing Argon by heating then followed by H + ion implantation. The results show that removal of argon by heating can improve the hydrogen retention of the C-SiC coatings. The thermal stability of hydrogen barrier for the C-SiC coatings was investigated, it is found that the property of hydrogen retention for the C-SiC coatings is still good after heating at 573 K, but it becomes worse after heating at 873 K, and it loses after heating at 1 173 K.