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e络盟日前宣布提供来自全球半导体和系统解决方案领先提供商英飞凌的高压MOSFET产品组合—C7和P6系列CoolMOSTM功率MOSFET,它们具备极低的开关和传导损耗,从而可实现更高的功率密度和效率。同时,该系列功率MOSFET还提供最优化的硬开关拓扑性能,完美应用于太阳能、服务器、电信设备及UPS(不间断电源)等应用领域。英飞凌科技公司高压功率转换产品负责人Jan-WillemReynaerts表示:“英飞凌推出的CoolMOSTM是一款用于根据超结理论设计高压功率MOSFET的
element14 today announced the availability of the C7 and P6 series CoolMOSTM power MOSFETs, a portfolio of high-voltage MOSFETs from Infineon, a global leader in semiconductor and system solutions, with extremely low switching and conduction losses for higher power Density and efficiency. At the same time, the series of power MOSFETs also provide optimized hard switching topology performance, perfect for applications in solar energy, servers, telecommunications equipment and UPS (uninterruptible power supply). Jan-Willem Reynnaerts, head of high-voltage power conversion products at Infineon Technologies, said: ”Infineon’s CoolMOSTM is a high-voltage power MOSFET designed for super high-junction power MOSFETs