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美国麻省理工学院(MIT)的研究人员们透过在两层铁电材料间夹进高迁移率的石墨烯薄膜,从而实现可直接在光讯号上操作的太赫兹(terahertz;THz)级频率晶片。根据麻省理工学院介绍,这种新材料堆叠可望带来比当今密度更高10倍的存储器,并打造出能直接在光讯号上操作的电子元件。“我们的研究成果可望为光讯号的传输与处理开启令人振奋的崭新领域,”MIT博士后研究员DafeiJin表示。这项研究是由DafeiJin以及MIT教授NicholasFang、JunXu、博士生AnshumanKumarSrivastava与前博士后研究员Kin-
Researchers at the Massachusetts Institute of Technology (MIT) achieved terahertz (THz) -like frequencies that can operate directly on optical signals by sandwiching high-mobility graphene films between two layers of ferroelectric material Wafer. According to MIT, this new stack of materials is expected to deliver 10 times more memory density than today and to create electronic components that operate directly on optical signals. “Our research results are expected to open exciting new areas for the transmission and processing of optical signals,” said MIT postdoctoral fellow Dafei Jin. This research was conducted by DafeiJin and MIT professors NicholasFang, JunXu, PhD student Anshuman Kumar Srivastava and former postdoctoral researcher Kin-