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成功研制了栅长为0.15μm、栅宽为2×50μm、源漏间距为2μm的InP基In0.52Al0.48As/In0.53Ga0.47As高电子迁移率器件.室温下,当器件VDS为1.7 V、VGS为0.1 V时,其有效跨导达到了1 052 mS/mm.传输线方法(TLM)测试显示器件的接触电阻为0.032Ω.mm,器件欧姆接触电阻率为1.03×10-7Ω.cm-2.正是良好的欧姆接触及其短的源漏间距减小了源电阻,进而使得有效跨导比较大.器件有比较好的射频特性.从100 MHz到40 GHz,S参数外推出来的fT和fmax分别为151 GHz和303 GHz.所报道的HEMT器件非常适合毫米波段集成电路的研制.
InP-based In0.52Al0.48As / In0.53Ga0.47As high electron mobility devices with a gate length of 0.15μm, a gate width of 2 × 50μm and a source-drain spacing of 2μm have been successfully fabricated.When the device VDS is 1.7 V , And the effective transconductance reached 1.052 mS / mm at VGS of 0.1 V. Transmission line method (TLM) tests showed that the device’s contact resistance was 0.032Ω.mm and the device’s ohmic contact resistance was 1.03 × 10-7Ω.cm- 2. It is the good ohmic contact and its short source-drain spacings that reduce the source resistance and thus make the effective transconductance relatively large. The device has good RF characteristics. From 100 MHz to 40 GHz, the S-parameter is extrapolated The fT and fmax are 151 GHz and 303 GHz respectively. The reported HEMT devices are well suited for the development of millimeter-wave integrated circuits.