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基于表面势理论和电荷平衡方程,建立了一种单材料双功函数栅(single materialdouble workfunction gate,SMDWG)MOSFET的电容模型,分别给出了SMDWG MOSFET的栅-源和栅-漏电容的解析表达式,物理概念清晰,且参数可调。通过与MEDICI模拟结果比较和分析,进一步验证了该物理模型的正确性和可行性。然后,基于上述模型设计了SMDWG MOSFET的电容等效电路,发现在考虑总电容的时候,只需要考虑其中的一个分电容,有效简化了对该器件的计算和分析,对器件的设计和应用具有一定的参考意义。
Based on the surface potential theory and the charge balance equation, a capacitor model of a single material dual workfunction gate (SMDWG) MOSFET is established. The analytical expressions of the gate-source and gate-drain capacitances of the SMDWG MOSFET are given respectively Style, physical concept is clear, and the parameters are adjustable. By comparing and analyzing with the MEDICI simulation results, the correctness and feasibility of the physical model are further verified. Then, based on the above model, the equivalent circuit of the SMDWG MOSFET capacitor is designed. It is found that when considering the total capacitance, only one of the sub-capacitors needs to be considered, which effectively simplifies the calculation and analysis of the device. The design and application of the device have Certain reference meaning.