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设计了一种高效率、结构紧凑的高功率激光放大器。采用解析方法分析了对称结构Nd:YAG双包层平面波导增益介质的内部热应力,获得了其可承受的最大抽运光强。针对不同厚度的内包层结构,采用Trace Pro软件模拟分析得到了最佳的抽运源结构和耦合系统。为了便于进行激光模式控制,掺杂区厚度取为100μm。内包层和外包层分别为纯YAG和蓝宝石,整个波导尺寸为60 mm×10 mm×2 mm。半导体激光器阵列输出的抽运光从波导的两个端面进入,两个大面和铜热沉焊接来获得良好的散热条件。种子光从一个端面注入,单通放大输出。通过模拟计算,在3384 W的抽运功率下,进入波导芯层的种子光功率为0.1 W,放大输出功率可以到达1322 W,光光效率约为39%。
A high efficiency and compact high power laser amplifier is designed. Analytical method was used to analyze the internal thermal stress of the symmetric Nd: YAG double clad planar waveguide gain medium, and the maximum pumping light intensity was obtained. According to the different thickness of the inner cladding structure, the best pumping source structure and coupling system were obtained by using TracePro software. In order to facilitate the laser mode control, the doped region thickness is taken as 100μm. The inner cladding and the outer cladding are pure YAG and sapphire, respectively, and the entire waveguide is 60 mm × 10 mm × 2 mm. Pumped laser output from the semiconductor laser array from both ends of the waveguide into the two large and copper heat sink welded to obtain good cooling conditions. Seed light injected from one end, single-pass amplification output. Through simulation, under the pumping power of 3384 W, the seed optical power entering the waveguide core is 0.1 W, the output power of amplification can reach 1322 W and the optical efficiency is about 39%.