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通过对掩膜版上不同狭缝与遮挡条设计与TFT沟道形貌、电学特性相互关系的分析,发现随着狭缝与遮挡尺寸的减小,TFT的电学特性、沟道处光刻胶起伏与最终关键尺寸偏移量都会改善。狭缝的尺寸比遮挡条的尺寸对TFT特性的影响更加显著。考虑到沟道转角处的短路几率问题,小的狭缝与遮挡条尺寸设计更加适合于四次掩膜光刻工艺,转角处的缺陷可以通过调整遮挡条的尺寸来避免。
Through the analysis of the relationship between the design of slits and shielding strips on the mask and the channel morphology and electrical characteristics of TFT, it is found that with the decrease of slit and shadow size, the electrical characteristics of TFT, the photoresist at channel The ups and downs and the final critical dimension offset will improve. The size of the slit has a more significant effect on the TFT characteristics than the size of the barrier strip. Given the short circuit probability at the corners of the channel, the small slit and mask size design is more suitable for four mask lithography processes where the corner defects can be avoided by adjusting the size of the mask bar.