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在室温至 77K范围内测量了 AlGaAs/GaAs DH激光器的正向伏安特性.发现有些激光器在低温下具有负阻的特性. 采用类 Schottky模型对DH激光器中的N-Al_(0.3)Ga_(0.7)As/n-GaAs异质结的电流传输特性进行分析,认为负阻现象是由于N型(AlGa)As层掺杂浓度偏低,N-n异质结在低温DH激光器正向偏置较大时,电子从n区隧道击穿N-n异质结势垒,或空穴从P型有源区注入N区引起的.此外N-AlGaAs层的施主杂质Sn的电离能很大也对低温负阻有贡献.
The forward voltammetry of the AlGaAs / GaAs DH laser was measured at room temperature to 77 K. The results show that some of the lasers have negative resistance at low temperature.The Schottky-like model is used to study the N-Al_ (0.3) Ga_ (0.7) ) As / n-GaAs heterojunction current transfer characteristics of the analysis, that the negative resistance phenomenon is due to the N-type (AlGa) As layer doping concentration is low, the Nn heterojunction low temperature DH laser forward bias is larger , The tunneling of electrons from the n-region tunnels to the Nn heterojunction barrier or the injection of holes into the N-region from the P-type active region. In addition, the ionization energy of the donor impurity Sn of the N-AlGaAs layer is also large, contribution.