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将纳米技术应用于光纤技术,通过改进的化学气相沉积法(MCVD),制成了一种新型的掺半导体纳米InP微粒的新结构光纤。经测试,该光纤中掺杂InP质量分数约为0.1%,且具有良好的波导通光性能。根据扫描电镜(SEM)下观察到的光纤截面微结构形貌,通过有限元法(FEM)进行数值分析,得到该光纤的有效截面面积约为10.01μm~2,从而进一步得到该光纤的非线性系数约为10.53 W~(-1)·km~(-1)。证实了此种光纤较普通光纤具有较高的非线性。
The application of nanotechnology to optical fiber technology, through the improved chemical vapor deposition method (MCVD), has made a new type of semiconductor doped InP particles of new optical fiber structure. After testing, the fiber doped InP mass fraction of about 0.1%, and has good waveguide light performance. According to the microstructure morphology of the optical fiber observed under a scanning electron microscope (SEM), the numerical analysis of the optical fiber is conducted by the finite element method (FEM), and the effective cross-sectional area of the optical fiber is about 10.01 μm ~ 2, thereby further obtaining the nonlinearity The coefficient is about 10.53 W ~ (-1) · km ~ (-1). Confirmed that such optical fiber has higher nonlinear than ordinary optical fiber.