日盲型AlGaN pin串联紫外探测器

• 作 者: 陶利友 张燕 刘福浩 李向阳
• 机 构: 中国科学院上海技术物理研究所,中国科学院大学,
• 出 处: 半导体光电
• 发表日期: 2013年05期
• 关键词: AlGaN pin 紫外探测器 日盲 光生电压 单元探测器 暗电流 开启电压 峰值响应 电探测器 MOCVD

对采用MOCVD生长的AlGaN pin结构上制备的背照日盲型3×3AlGaN串联紫外探测器进行了光电性能的研究。室温下单元探测器的峰值响应在278nm为0.03A/W。串联器件的正向开启电压随器件个数增加而增大,串联特性使得其暗电流较小,光生电压随器件个数的增加呈线性变化,串联器件在氙灯照射下能达到近15V的光生电压。文中还对I-V测试采样中存在的零点漂移做了分析,试给出从实验结果计算反向饱和电流密度的方法。

The photoelectric performance of back-illuminated, day-blind 3 × 3AlGaN tandem UV detector fabricated on MIGVD-grown AlGaN pin was studied. The peak response of the cell detector at room temperature was 0.03 A / W at 278 nm. The forward turn-on voltage of series devices increases with the increase of the number of devices. The tandem characteristic makes the dark current smaller, and the photovoltaic voltage changes linearly with the increase of the number of devices. The tandem devices can reach photovoltaic voltage of nearly 15V under xenon lamp irradiation . The paper also analyzes the zero drift existed in the I-V test sample and gives a method to calculate the reverse saturation current density from the experimental results.