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采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属 -氮化物 -氧化物 -半导体场效应晶体管 ) .给出了该器件的电离辐射效应及瞬态大剂量辐射的实验数据 ,与常规 VDMOSFET相比获得了良好的抗辐射性能 .对研制的 2 0 0 V VDMNOSFET,在栅偏压 +10 V,γ 总剂量为 1Mrad (Si)时 ,其阈值电压仅漂移了 - 0 .5 V,跨导下降了 10 % .在 γ瞬态剂量率达 1× 10 1 2 rad(Si) /s时 ,器件未发生烧毁失效 .实验结果证明 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区显著地改善了功率 MOS器件的抗电离辐射及抗辐射烧毁能力
A novel radiation-hardened power device, the VDMNOS-FET (vertical double diffused metal-nitride-oxide-semiconductor field effect), has been developed using Si3N4-Si O2 double-layered gate dielectric and self-aligned heavily doped shallow junction P + Transistor) .The experimental data of the ionizing radiation effect and transient high dose radiation of the device are given, and the good radiation resistance performance compared with the conventional VDMOSFET is obtained.For the developed 200 V VDMNOSFET, at a gate bias of +10 When the total dose of V and γ is 1 Mrad (Si), the threshold voltage only drifts by -0.5 V and the transconductance decreases by 10%. When the γ transient dose rate reaches 1 × 10 12 rad (Si) / s , The device did not burn failure.Experimental results show that Si3N4-Si O2 double gate dielectric and self-aligned heavily doped shallow junction P + region significantly improved power MOS devices anti-ionizing radiation and anti-radiation ablation capacity