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Recently,neuromorphic devices for artificial intelligence applications have attracted much attention.In this work,a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films,a typical correlated electron material,is presented.The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating.The non-volatile conductance change reached 104 under a 2 V gate voltage.By manipulating the amount of inserted protons,the three-terminal NdNiO3 artificial synapse imitated important synaptic functions,such as synaptic plasticity and spike-timing-dependent plasticity.These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.