,Stability and electronic structure of InN nanotubes from first-principles study

• 作 者: Chen Li-Juan
• 机 构: Application Physics Department of South China University of Technology,Guangzhou 510640,China
• 出 处: 中国物理（英文版）
• 发表日期: 2006年4期
• 关键词: InN strain energies band gap first-principles calculation

The stability and electronic structure of hypothetical InN nanotubes were studied by first-principles density functional theory.It was found that the strain energies of InN nanotubes are smaller than those of carbon nanotubes of the same radius.Single-wall zigzag InN nanotubes were found to be semiconductors with a direct band gap while the armchair counterparts have an indirect band gap.The band gaps of nanotubes decrease with increasing diameter,similar to the case of carbon nanotubes.