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研究了直拉硅片从不同的温度线性升温(Ramping)到750℃,然后在750℃退火64h过程中的氧沉淀行为.结果表明,Ramping对硅片中氧沉淀的形成有明显的促进作用,且起始温度越低促进作用越强.这是因为在Ramping处理中,低温(450—650℃)热处理阶段氧的扩散速率显著增强,促进了氧沉淀核心的形成,且较低的Ramping升温速率有利于氧沉淀核心的稳定和继续长大.进一步的实验结果还表明,低起始温度的Ramping处理可应用于硅片的内吸杂工艺,能促进氧沉淀的生成提高硅片的内吸杂能力,减少热预算,但不适用于魔幻洁净区(MDZ)工艺.
The oxygen deposition behavior of Czochralski silicon wafers from Ramping to 750 ℃ and then annealing at 750 ℃ for 64h was studied.The results show that Ramping can significantly promote the formation of oxygen precipitation in silicon wafer, And the lower the initial temperature, the stronger the promotion.The reason is that in the Ramping treatment, the diffusion rate of oxygen at the low temperature (450-650 ℃) heat treatment stage is significantly enhanced, which promotes the formation of oxygen precipitation core and the lower Ramping heating rate Which is in favor of the stable and continuous growth of the oxygen precipitation core.Further experimental results also show that Ramping treatment with low initial temperature can be applied to the internal gettering process of silicon wafer and can promote the formation of oxygen precipitation and improve the internal gettering Ability to reduce thermal budget but not for the MDZ process.