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采用新近研制的高真空 /快速热处理 /化学气相淀积 (HV/ RTP/ CVD)系统生长了应变 Si Ge材料 .通过仔细设计的处理过程可以得到器件质量的材料 .Ge组分可以变化至 0 .2 5 ,可以得到控制良好的 n型和 p型掺杂层 ,适用于异质结双极型晶体管 (HBT)的制作 .研究了 Si Ge HBT的 n- Si/ i- p+ - i Si Ge/ n- Si结构 .所制作出的微波 HBT性能良好 ,证明了设备和工艺的水平
Strain SiGe materials have been grown using a newly developed high-vacuum / rapid thermal / chemical vapor deposition (HV / RTP / CVD) system. Device quality materials can be obtained by carefully designed processing. 25 well-controlled n-type and p-type doped layers can be fabricated for the fabrication of heterojunction bipolar transistors (HBTs). The effects of n-Si / i- p + - i Si Ge / n-Si structure produced by the microwave HBT good performance, proved the level of equipment and technology