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湿氧中温度范围为700—850℃,根据线性——抛物线的速率定律来研究重掺磷多晶硅及单晶硅衬底的特性·不掺杂或以1.1×10~（19）—2.2×10~（21）cm~（-3）的磷用扩散法或离子注入法均匀掺杂的多晶硅被用来与轻掺杂或重掺杂硅衬底的（100）、（110）和（111）面比较研究·磷浓度大于1×10~（20）cm~（-3）引起氧化速率的显著增加,然而超过1×10~（21）cm~（-3）氧化速率趋向于变成饱和·观察到氧化初始阶段的快速氧化。初始氧化并不适合线性——抛物线的速率定律·掺磷多晶硅的电阻率对磷浓度约6×10~（20）cm~(-3)有一个最小值为5×10~（-4）Ω-βm·多晶硅厚度被氧化减小以后,初始的电阻率几乎保持常数·另外,没有观察到沿着晶粒边界有增强氧化的迹象。
Wet oxygen in the temperature range of 700-850 ° C, according to the linear - parabolic rate law to study the characteristics of heavily doped polysilicon and single-crystal silicon substrate · undoped or 1.1 × 10 ~ (19) -2.2 × 10 Polysilicon doped uniformly with phosphorus of ~ (21) cm ~ (-3) by diffusion method or ion implantation is used for the (100), (110) and (111) When the phosphorus concentration was more than 1 × 10 ~ (20) cm ~ (-3), the oxidation rate was significantly increased, while the oxidation rate exceeding 1 × 10 ~ (21) cm ~ 3 tended to become saturated The rapid oxidation of the initial oxidation stage was observed. The initial oxidation rate is not suitable for the linear-parabolic rate law. The resistivity of phosphorus-doped polysilicon has a minimum value of 5 × 10 -4 Ω for a phosphorus concentration of about 6 × 10-20 cm -3. -βm · Initial polysilicon thickness is reduced by oxidation, the initial resistivity is almost constant · In addition, no evidence of enhanced oxidation along the grain boundaries is observed.