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提供了一种分析MOST模型,模型包含弱反型和短沟道效应,精确测量了沟道长度小至1μm的MOST特性。根据这模型精确地预言出大规模集成电路最佳的E/D倒相器性能极限是:L=0.3μm,V_(DD)=0.5V Ptd=0.5fJ 最佳例相器结构如图1所示,增强型器件的沟道长度Le和耗尽型器件的宽度Wd等于最小特征尺寸L,为减小倒相器的作用面积,几何尺寸比β选择为β~(1/2)=We/Le=Ld/Wd,增强型离子注入时,耗尽型被掩蔽着,结果负载衬底偏置的灵敏度较小。因为注入区是很浅的(～1000(?))而且5沟道截止P~+区
Provides an analysis of the MOST model, which contains weak inversion and short channel effects, and accurately measures MOST characteristics with channel lengths as small as 1 μm. According to this model, it is predicted that the best performance limit of E / D inverter in large scale integrated circuits is: L = 0.3μm, V DD = 0.5V Ptd = 0.5fJ. The channel length Le of the enhancement device and the width Wd of the depletion device are equal to the minimum feature size L. To reduce the active area of the inverter, the geometric size ratio β is selected as β 1/2 (1/2) = We / Le = Ld / Wd, depletion mode is masked with enhanced ion implantation, with the result that the bias of the load substrate is less sensitive. Because the implanted region is very shallow (~ 1000 (?)) And the 5 channels cut off P ~ + regions