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分别对带隙较宽(较窄)的p型材料在带隙较窄(较宽)的n型材料之上的碲镉汞(MCT)异质结的能带结构进行了理论分析.在应用的理论模型中提出了一个简单的载流子浓度近似模型用于计入载流子简并效应和导带非抛物线性,同时还考虑到了价带失配的影响.就p-n结位置(zB)和界面电荷密度(Q)两个参数对MCT异质结能带结构的影响进行了系统分析,发现这些影响是不可忽略的.根据这些影响特征,进一步得出了zB和Q参数之间的优化设计规律.
The energy band structures of HgCdTe heterojunction on the narrower (narrower) p-type material with wider band gap are respectively analyzed theoretically. A simple approximate model of carrier concentration is proposed to account for the carrier degeneracy and the non-parabolicity of the conduction band, and the influence of the valence band mismatch is taken into account.For the pn junction location (zB) And the interfacial charge density (Q) on the energy band structure of MCT heterojunction were systematically analyzed and found that these effects were not negligible. Based on these influence characteristics, the optimization between zB and Q parameters was further obtained Design rules.