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本文利用化学气相反应(CVR)法,系统研究了不同温度对Ce掺杂的SiC纳米线及其场发射性能的影响规律.利用扫描电镜(SEM)、透射电镜(TEM)、选区电子衍射(SAED)、X射线衍射(XRD)对所得产物进行了表征,并对其场发射性能进行了测试.结果表明:所得产物为具有立方结构的β-SiC晶体,随着温度的升高,纳米线逐渐变的弯曲,Ce的含量降低,产物的开启电场和阈值电场先升高后降低.当合成温度为1250C,Ce的含量为0.27at%,产物的场发射性能最佳,开启电场和阈值电场分别为2.5V/μm和5.2V/μm.
In this paper, the effects of different temperatures on the Ce-doped SiC nanowires and their field emission properties were studied systematically by chemical vapor reaction (CVR). The effects of different temperatures on the field emission properties of the Ce nanowires were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction ) And X-ray diffraction (XRD), and their field emission properties were tested.The results show that the obtained product is β-SiC crystal with cubic structure, and as the temperature increases, the nanowires gradually When the synthesis temperature is 1250C, the content of Ce is 0.27at%, the field emission performance of the product is the best, the turn-on electric field and the threshold electric field are respectively 2.5V / μm and 5.2V / μm.