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详细研究了离轴掩模的原理 ,将离轴照明 (OAI)与相移掩模 (PSM)技术结合起来 ,在掩模上同时实现两种功能 ,较大程度地提高了光刻分辨力 .实验表明 ,在数值孔径 0 .42 ,i线曝光波长下 ,可将光刻分辨力从 0 .8μm提高到 0 .5μm.
The principle of off-axis mask is studied in detail. Combining off-axis illumination (OAI) and phase shift mask (PSM), two functions are simultaneously implemented on the mask, which greatly improves the resolution of lithography. Experiments show that at a numerical aperture of 0.42, i-line exposure wavelength, the resolution of lithography can be increased from 0 .8μm to 0 .5μm.