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利用ICP对研制的SiC衬底上Al GaN/GaN HEMT刻蚀获得了深度为50μm的接地通孔.器件通孔制作前首先用机械研磨的方法将衬底减薄至50μm,在背面蒸发Ti/Ni并电镀Ni至3μm作为刻蚀阻挡层;之后利用SF6/O2混合气体的电感耦合等离子体对SiC衬底进行了刻蚀;最后将Cl2和BCl3混合气体的ICP刻蚀技术运用于Al GaN/GaN外延材料的刻蚀,完成了深度为50μm的Al GaN/GaN HEMT通孔制作,通孔侧壁具有一定的斜率,适合良好的金属覆盖以形成器件正面和背面的连接.这一技术非常适合Al GaN/GaN HEMT及其单片集成电路的研制.
Grounding vias with a depth of 50μm were obtained by etching the AlGaN / GaN HEMTs on the as-grown SiC substrate.At first, the substrate was thinned to 50μm by mechanical grinding before the via was fabricated and the Ti / Ni and Ni plating to 3μm as an etch barrier; followed by an SF6 / O2 gas mixture of the inductively coupled plasma SiC substrate was etched; finally Cl2 and BCl3 mixed gas ICP etching technology applied to Al GaN / GaN epitaxial material was etched to complete AlGaN / GaN HEMT vias at a depth of 50 μm, with sidewalls of the via having a slope that is suitable for good metal coverage to form the front and rear faces of the device. This technique is well suited Development of Al GaN / GaN HEMT and Its Monolithic Integrated Circuit.