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应用动电位扫描法和恒电位阶跃法对硫酸铜体系在玻璃上的电结晶进行了研究。发现铜在该基体上的沉积没有经历UPD过程,测得其临界成核过电位为-0.104V。在本实验条件下,成熟晶核的生长受溶液中Gu~(2+)的扩散所控制,通过分析电位暂态,求出了铜的扩散系数以及不同过电位下的晶核数密度N,并对由连续成核转变为瞬时成核的原因进行了分析。
The electrocrystallization of copper sulfate on glass was studied by potentiodynamic scanning and potentiostatic step method. It was found that the deposition of copper on this substrate did not undergo the UPD process and its critical nucleation overpotential was -0.104V. Under the experimental conditions, the growth of mature nuclei is controlled by the diffusion of Gu ~ (2+) in the solution. The diffusion coefficient of copper and the nucleus density N under different overpotential are obtained by analyzing the transient of potential. The reasons for the transition from continuous nucleation to transient nucleation were also analyzed.