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介绍了用X射线双晶及三晶衍射仪检验半导体晶片研磨及抛光损伤的原理及方法.利用双晶衍射结合腐蚀剥层方法能够定量测定晶片研磨损伤层深度.提出用双晶及三晶衍射方法可以非破坏性地检验晶片的抛光质量,并能比较不同抛光工艺的效果.采用建议的三晶衍射方法检验多种不同晶片时,可以不必更换参考晶片,因而有迅速、方便的优点.
The principle and method of inspecting the abrading and polishing damage of the semiconductor wafer by X-ray twin crystal and three-crystal diffractometer are introduced.The depth of abraded layer of the wafer can be measured quantitatively by double crystal diffraction combined with corrosion stripping method, The method allows non-destructive inspection of wafer polishing quality and can compare the effects of different polishing processes.With the proposed triple crystal diffraction method for inspecting a wide range of different wafers, it is possible to eliminate the need to change the reference wafers, thereby providing quick and easy advantages.