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硅双极微波晶体管的发射极区和基区的杂质浓度都较高,杂质浓度高的程度及其分布随管子不同而异。总的说来,禁带宽度变窄和杂质非全离化,都将产生影响:影响多数载流子浓度和少数载流子浓度,影响晶体管的特性。随着杂质浓度的不同,影响的大小也将不同。禁带宽度变窄和杂质非全离化,只考虑其中之一可能带来不太合理的结果。本文探讨禁带宽度变窄和杂质非全离化两者的影响,将计算结果和实验结果作一比较,由此得出一些重要的结论。
Silicon bipolar microwave transistor emitter region and the base of the impurity concentration are higher, the high degree of impurity concentration and its distribution varies with the tube varies. In general, narrowing the bandgap and impurity non-full ionization, will have an impact: affect the majority of the carrier concentration and minority carrier concentration, affecting the transistor characteristics. With the different impurity concentrations, the size of the impact will be different. Narrowing of the forbidden band width and incomplete segregation of impurities, considering only one of them may result in less than reasonable results. In this paper, we discuss the influence of the narrowing of the forbidden band and the non-complete ionization of impurities. Comparing the calculated results with the experimental results, we draw some important conclusions.