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用等离子体辅助分子束外延的方法生长了n-ZnO/i-MgO/p-GaN异质结发光二极管。I-V测量表明其具有典型的二极管整流特性。电致发光峰位于382 nm,通过与n型ZnO和p型GaN的光致发光谱比较,其发光峰位与线形都与ZnO的自由激子发射一致,表明该电致发光来自于ZnO的自由激子发射。通过Anderson模型比较了n-ZnO/i-MgO/p-GaN和n-ZnO/p-GaN异质结的能带示意图,证明了由于MgO层的插入抑制了ZnO向GaN层中的电子注入,且有利于空穴向ZnO层注入,从而实现了ZnO层中的电注入发光。
The n-ZnO / i-MgO / p-GaN heterojunction light-emitting diode was grown by plasma-assisted molecular beam epitaxy. I-V measurements show that it has a typical diode rectifier characteristics. The electroluminescence peak is at 382 nm. The emission peak and the line shape are consistent with the free exciton emission of ZnO by comparison with the photoluminescence spectra of n-type ZnO and p-type GaN, indicating that the electroluminescence comes from the ZnO free Exciton emission. The energy band diagram of n-ZnO / i-MgO / p-GaN and n-ZnO / p-GaN heterojunctions was compared by Anderson model. It was proved that the insertion of MgO layer inhibited the electron injection of ZnO into the GaN layer. And facilitates the injection of holes into the ZnO layer, thereby realizing the electrical injection and luminescence in the ZnO layer.