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利用同步辐射光发射研究了Ｓｍ／ＧａＡｓ（１０）界面形成．高分辨的芯能级谱结果表明，在低覆盖度下（＜０．１ｎｍ），Ｓｍ与衬底的作用较弱，形成较突出的金属／半导体界面．当Ｓｍ的覆盖度增加时，Ａｓ和Ｇａ的表面发射峰很快消失，表明Ｓｍ与Ｇａ发生置换反应而与Ａｓ形成化学键．同时，Ｇａ原子会向Ｓｍ膜体内扩散且偏析到Ｓｍ膜表面，而Ａｓ－Ｓｍ化合物只停留在界面区域．当Ｓｍ膜厚度达到０．５ｎｍ时，Ｓｍ膜开始金属化．结合理论模型，文中还详细地讨论了界面形成和界面结构．
The formation of Sm / GaAs (10) interface has been studied using synchrotron radiation. High-resolution core energy spectrum results show that at low coverage (<0.1nm), Sm and the substrate is weak, forming a more prominent metal / semiconductor interface. As Sm coverage increases, the surface emission peaks of As and Ga disappear rapidly, indicating that Sm and Ga undergo a displacement reaction to form a chemical bond with As. At the same time, Ga atoms diffuse into the Sm film and segregate to the Sm film surface, while the As-Sm compound only stays in the interface region. When the Sm film thickness reaches 0.5 nm, the Sm film starts to be metallized. Combined with the theoretical model, the article also discussed in detail the interface formation and interface structure.