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据《NIKKEI MicroDevices》2009年第10期报道,韩国三星电子研发了高灵敏度新型CMOS传感器,采用背面照射(BSI:backside illumination)技术,计划2010年应用并量产。与CCD相比,CMOS的缺点是灵敏度偏低,而背面照射(BSI)技术是一种提高灵敏度的技术途径。原来的CMOS传感器并在光传感
According to “NIKKEI MicroDevices” 2009 the tenth period reported that South Korea’s Samsung Electronics developed a new high sensitivity CMOS sensor, the use of backside illumination (BSI: backside illumination) technology, plans to 2010 and mass production applications. CMOS has the disadvantage of being less sensitive than CCDs, while back side illumination (BSI) is a technology that increases sensitivity. The original CMOS sensor is optically sensed