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采用0.8μm CMOS工艺线制作了一种基于载流子注入的SOI 4×4马赫-曾德(MZ)光开关阵列,其由4个2×2基于多模干涉(MMI)耦合器的MZ(MMI-MZ)光开关单元组成。通过对调制臂施加电压,利用Si的载流子色散效应引起调制区的折射率变化实现开关功能。测试结果表明,当输入光为1 510～1 580nm的宽带光源时,光开关阵列的不同路径间的串扰低于-8.02dB,支持的公共带宽为35nm(1 530～1 565nm),开关阵列的上升和下降时间分别为17.4ns和21ns。
An SOI 4 × 4 Mach-Zehnder (MZ) optical switch array based on carrier injection is fabricated on a 0.8μm CMOS process line, which consists of four 2 × 2 MZ-based multimode interference (MMI) MMI-MZ) optical switch unit. By applying a voltage to the modulation arm, the switching function is achieved by utilizing the carrier dispersion effect of Si to cause a change in the refractive index of the modulation region. The test results show that when the input light is a broadband light source with a wavelength of 1 510 ~ 1 580 nm, the crosstalk between different optical pathways is less than -8.02 dB and the common bandwidth is 35 nm (1 530 ~ 1 565 nm) The rise and fall times are 17.4ns and 21ns respectively.