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据日本《日经电子学》1989年第466期报导,日本电气基础研究所研制AlGaSb/Gasb系异质结双极晶体管,并已确认从室温到100K左右均可工作.HBT与现在的Si双极晶体管相
According to Japan’s “Nikkei Electronics” 1989 466th reported that the Japan Electric Basic Research Institute developed AlGaSb / Gasb Department Heterojunction Bipolar Transistor and has confirmed that from room temperature to about 100K can work.HBT with the current Si double Very transistor phase