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基于光激活物质空间迁移长度的概念，推导出方形反应空间中到达基片上单位面积的光激活物质总数的解析表达式，对光化学汽相沉积中淀积速率和基片位置的关系进行了模拟和分析． 模拟结果同实验结果符合良好．
Based on the concept of spatial migration length of photoactive material, the analytical expressions of the total number of photoactive materials reaching the substrate per square area in the rectangular reaction space are deduced. The relationship between the deposition rate and the position of the substrate in photochemical vapor deposition analysis. The simulation results agree well with the experimental results.