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用深能级瞬态谱技术研究了快速热氮化SiO_xN_y膜界面态密度及界面态俘获截面特性,分析了Si/SiO_xN_y界面的DLTS理论,结果表明,快速热氮化SiO_xN_y膜的界面态密度随禁带中能量呈现“U”形分布,该种薄膜界面态俘获截面在禁带中的能量分布近似呈现指数规律,且禁带中央附近的界面态俘获截面比价带顶附近的俘获截面大得多,影响微电子器件电学特性的界面态主要仍是禁带中央附近的界面能态。结果还给出了DLTS技术与雪崩热电子注入法测试SiO_xN_y膜界面态密度能量分布的比较,得到两种不同方法的研究结果基本一致。文中并对实验结果进行了分析与讨论。
The deep state transient spectroscopy technique was used to study the interface state density and interfacial state trapping cross-section characteristics of the rapidly thermal-nitrided SiOxNy films. The DLTS theory of the Si / SiOxN_y interface was analyzed. The results show that the interfacial density The energy distribution in the forbidden band shows a U-shaped distribution. The energy distribution in the forbidden band at the interfacial state exhibits an exponential law, and the interfacial capture cross section near the center of the forbidden band is much larger than the capture cross section near the top of the valence band , The interface states that affect the electrical properties of microelectronic devices are still mainly the interface states near the center of the forbidden band. Results The DLTS technique and the avalanche hot electron injection method were also used to compare the energy density distributions at the SiO_xN_y interface. The results of the two different methods are basically the same. In the paper, the experimental results are analyzed and discussed.