ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE

来源 :Journal of Electronics(China) | 被引量 : 0次 | 上传用户：wlg1991

【摘要】

：

Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived,

【出处】

：

Journal of Electronics(China)

【发表日期】

：

1996年3期

【关键词】

：

ECL CIRCUIT LOW TEMPERATURE DC Characteristics SPICE ECL circuit Low temperatur

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Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of

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ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE

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